Scientists from Skoltech Center for Photonics and Quantum Materials have reported on electrical monolayer black phosphorus transport properties and electro-optical response in molybdenum disulfide. Potential of both of this compounds are actively explored for electronic and opto-electronic applications.
Two-dimensional materials, usually atomically thin layers, have attracted a great deal of attention due to their excellent transport and optical properties. A lot of research groups all over the world study their potential for implementation in electronics and optoelectronics. Graphene was a first such material and it is very well studied by now, while other 2D semiconductor materials are actively explored. For all its superlative properties graphene has no energy gap, which limits many potential applications. In the recent studies Skoltech scientists report new interesting properties of two novel atomically thin materials.
In the first work, Skoltech researchers report the comprehensive studies of the intrinsic transport properties of a monolayer black phosphorous, a direct bandgap material. In the past 2-3 years, several concepts of infrared imaging, photodetection, and electronic applications have been demonstrated. Performances of these devices critically depend on transport properties, which are limited by the phonon scattering.
Vasilii Perebeinos, Skoltech Professor, the leader of the study: “Our findings elucidates microscopic mechanism of electrical transport of black phosphorous which helps to design devices in the presence of the high thermal power dissipation per unit area giving rise to high temperatures.”
The second work is devoted to molybdenum disulfide (MoS2). Skoltech scientists in collaboration with the colleges at SUNY Buffalo and University of Regensburg gained a dipper insight into it’s opto-electronic properties. Recently, monolayers of MoS2 have emerged as two-dimensional materials that combine high electronic mobilities with a direct band gap. A remarkable characteristic of these materials is that they possess excitons with large binding energies of several hundreds of meV, orders of magnitude larger than in conventional bulk semiconductors. As a consequence of their large exciton binding energies, exciton dissociation by electric field, Stark shift, and spectral weight transfer can be substantial under experimental conditions. Vasilii Perebeinos, said: “Our results show what electric fields are required for excitons to dissociate into free electron-hole pairs as function of dielectric environment, which provides a path to engineering the MoS2 electro-optical response utilized in solar energy harvesting and photodetection.”
Both papers are published in Physical Review B with the first, the last, and the corresponding authors being from Skoltech.
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