Keywords
ULSI, interconnect, dielectric, low-k, nanocomposite
Applications
ULSI interconnects, interlayer dielectrics
Problem statement
The modern ULSI technology requires interconnects with less and less dielectric constant. Though modern dielectrics demonstrate k = 2.5 the materials with k < 2 are required by the industry
Technology
We developed a new ultra low-k dielectric material, which is a combination of inorganic nanoparticles with voids inside and the highly fluorinated polymers. This combination allowed us to obtain materials with the k (dielectric constant) < 2. The technology is spin-on and compatible with modern ULSI manufacture technology. Also our material possesses mechanical and thermal durability and low copper diffusion rate as well as high values of breakdown voltage and low leakage current. If implemented, it will allow the next step in the miniaturization of ULSI and is intended for the 12 nm and less integration.
Advantages
Inventors/Authors
Intellectual Property
Publications
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